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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A DESCRIPTION *With TO-202 package *Complement to type 2SC1226/1226A APPLICATIONS *Power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL PARAMETER 2SA699 VCBO Collector-base voltage 2SA699A 2SA699 VCEO Collector-emitter voltage 2SA699A VEBO IC ICM IB B CONDITIONS VALUE -40 UNIT Open emitter -50 -32 Open base -40 Open collector -5 -2 -3 -0.6 TC=25 10 150 -55~150 V V Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature V A A A W PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEsat VBEsat PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage 2SA699 IC=-1mA;IE=0 2SA699A 2SA699 IC=-10mA; IB=0 2SA699A ICBO ICEO IEBO hFE COB fT Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency VCB=-20V; IE=0 VCE=-12V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IE=0; VCB=-5V;f=1MHz IE=0.5A ; VCB=-5V CONDITIONS IC=-1.5A ;IB=-0.15A IC=-2A ;IB=-0.2 A B 2SA699 2SA699A MIN TYP. -0.4 MAX -1.0 -1.5 UNIT V V V(BR)CBO Collector-base breakdown voltage -40 V -50 -32 V -40 -1 -100 -100 50 70 150 220 pF MHz A A A V(BR)CEO Collector-emitter breakdown voltage hFE classifications P 50-100 Q 80-160 R 100-220 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA699 2SA699A Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A 4 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA699 2SA699A 5 |
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